GaN Based FETs for Power Switching Applications
نویسنده
چکیده
This paper discusses the background, applications, and proposed characterization of Gallium Nitride (GaN) based hybrid MOS-HEMTs for high-voltage power switching. The basic material properties, device structure, and basics of operation are discussed in section II. Section III touches on the relevance and motivation behind this research and some simple examples of where GaN based MOS-HEMTs would be used. Section IV outlines an experimental plan to characterize newly designed and fabricated MOSHEMTs in order to compare their performance and design tradeoffs with previously fabricated devices and current state of the art MOS-HEMTs.
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